High temperature study of flexible silicon-on-insulator fin field-effect transistors

• Published in: Applied physics letters Vol. 105; no. 13
• Main Authors: Diab, Amer, Torres Sevilla, Galo A., Ghoneim, Mohamed T., Hussain, Muhammad M.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 29-09-2014
• Subjects: Applied physics; CARRIER MOBILITY; Computer architecture; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Current leakage; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; Fins; Flexible components; Gates; High temperature; LEAKAGE CURRENT; METALS; PHONONS; SCATTERING; Semiconductor devices; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; Transconductance
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4897148

We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.