Defect annihilation in shallow p+ junctions using titanium silicide

• Published in: Applied physics letters Vol. 51; no. 15; pp. 1182 - 1184
• Main Authors: WEN, D. S, SMITH, P. L, OSBURN, C. M, ROZGONYI, G. A
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 12-10-1987
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Interfaces; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Boron; Ion implantation; Titanium Silicides; Complementary MOS technology; Amorphization; Germanium; Defect annihilation; Junction; Shallow depth; Thermal annealing
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.98726

The residual extended defects due to end-of-range ion implantation damage can be totally eliminated by Ti silicidation. Shallow p+ junctions were formed by amorphizing the silicon with Ge implantation (85 keV, 1×1015 cm−2) prior to implanting boron (85 keV, 1×1015 cm−2), recrystallizing the amorphous region at 550 °C, and then rapid thermal annealing at 1050 °C for 10 s. A buried sheet of interstitial dislocation loops lying below the surface remained. However, following a self-aligned Ti silicide process, the end-of-range defects due to Ge ion implantation damage were no longer observed in cross-sectional transmission electron micrographs. The annihilation of these end-of-range interstitial dislocation loops is attributed to the injection of vacancies during Ti silicidation.