Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platform

• Published in: Applied physics letters Vol. 107; no. 17
• Main Authors: Alfaraj, Nasir, Hussain, Aftab M., Torres Sevilla, Galo A., Ghoneim, Mohamed T., Rojas, Jhonathan P., Aljedaani, Abdulrahman B., Hussain, Muhammad M.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 26-10-2015
• Subjects: Applied physics; Carrier transport; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; Electronic devices; Electronics; FIELD EFFECT TRANSISTORS; Flexible components; Impact loads; INTEGRATED CIRCUITS; Jewelry; LEAKAGE CURRENT; METALS; MOSFETs; Semiconductor devices; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; Transistors
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4934355

Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.