Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method

• Published in: SILICON Vol. 13; no. 9; pp. 2921 - 2931
• Main Authors: Preethi, S., Balamurugan, N. B.
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 01-09-2021; Springer Nature B.V
• Subjects: Chemistry; Chemistry and Materials Science; Decomposition; Differentiation; Electric fields; Environmental Chemistry; Inorganic Chemistry; Lasers; Materials Science; Mathematical analysis; Mathematical models; Modelling; MOSFETs; Optical Devices; Optics; Original Paper; Photonics; Poisson equation; Polymer Sciences; Silicon; Threshold voltage; Transistors; Two dimensional analysis; Two dimensional models; And semiconductor devices; Junctionless field effect transistor (JLFET); Surrounding gate (SG); Dual material surrounding gate (DMSG)
• ISSN: 1876-990X; 1876-9918
• DOI: 10.1007/s12633-020-00653-5

In this paper
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a novel two-dimensional analytical model for threshold voltage on Dual Material Surrounding Gate Junctionless MOSFET is proposed. The analytical study is aimed at decomposing the 2-D Poisson Equations into two 1-D equations. This decomposition enables modeling of Dual Material Gates into two individual single gates. For this prospect, the Finite Differentiation Method is applied. The decomposed individual 1-D Poisson models are combined by employing relevant boundary constraints. This, in turn, provides a normal and easy solution for equation related to complex 2-D Poisson. The proposed potential model facilitates expressions of threshold voltage and sub-threshold swing. Finally, the simulation results and the analytical results were compared with the simulations obtained from TCAD which showed significant compatibility. Thus, it is defended that the proposed model illustrates the guidance regarding the designing of Dual Material Surrounding Gate Junctionless MOSFETs.