Tensile-strained GaAsN quantum dots on InP

Tensile-strained GaAsN quantum dots on InP

Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed...

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Bibliographic Details
Published in:Applied physics letters Vol. 90; no. 17; pp. 172110 - 172110-3
Main Authors: Pohjola, P., Hakkarainen, T., Koskenvaara, H., Sopanen, M., Lipsanen, H., Sainio, J.
Format: Journal Article
Language:English
Published: American Institute of Physics 23-04-2007
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Summary:Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situ annealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1 eV , respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2719662