Dielectric Relaxation Mechanism in High-Pressure Synthesized BiCr0.5Mn0.5O3

• Published in: Journal of electronic materials Vol. 50; no. 4; pp. 1615 - 1620
• Main Authors: Mandal, P., Sundaresan, A.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01-04-2021; Springer Nature B.V
• Subjects: Asian Consortium ACCMS–International Conference ICMG 2020; Asian Consortium AC–CMS International Conference ICMG 2020; Characterization and Evaluation of Materials; Chemistry and Materials Science; Dielectric relaxation; Electrode polarization; Electronics and Microelectronics; Grain boundaries; High temperature; Instrumentation; Low temperature; Materials Science; Optical and Electronic Materials; Permittivity; Room temperature; Solid State Physics; Synthesis; Temperature; Perovskite; impedance spectroscopy; high-pressure synthesis; giant dielectric constant; Maxwell–Wagner relaxation
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-020-08408-z

The compound BiCr
0.5
Mn
0.5
O
3
, synthesized at high pressure and high temperature, shows a giant dielectric constant over a wide range of temperatures. Two relaxation processes are observed commencing around 200 K and 300 K. The low-temperature relaxation process is attributed to Maxwell–Wagner polarization at the grain boundary, whereas the second relaxation is attributed to the electrode polarization effect. Impedance spectroscopy reveals that the oxide is electrically inhomogeneous and dominant contribution arises from semiconducting grains and insulating grain boundary below room temperature. Above room temperature, the electrode polarization effect also contributes to the observed giant dielectric constant.