Synthesis and characteristics of bis(2,4-dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum (III): A potential hole-blocking material for the organic light-emitting diodes

The 5-coordinated bis(2,4-dimethyl-8-quinolinolato)aluminum (III) (24MeSAlq) was synthesized and characterized by various analyses. The high hole-blocking property of 24MeSAlq in the organic light-emitting devices (OLEDs) was enhanced by the high HOMO (highest Occupied Molecular Orbital) energy leve...

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Bibliographic Details
Published in:Journal of organometallic chemistry Vol. 691; no. 12; pp. 2701 - 2707
Main Authors: Lim, J.T., Jeong, C.H., Lee, J.H., Yeom, G.Y., Jeong, H.K., Chai, S.Y., Lee, I.M., Lee, W.I.
Format: Journal Article
Language:English
Published: Elsevier B.V 01-06-2006
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Summary:The 5-coordinated bis(2,4-dimethyl-8-quinolinolato)aluminum (III) (24MeSAlq) was synthesized and characterized by various analyses. The high hole-blocking property of 24MeSAlq in the organic light-emitting devices (OLEDs) was enhanced by the high HOMO (highest Occupied Molecular Orbital) energy level. Its HOMO level was proved by cyclic voltammogram. A new five-coordinated bis(2,4-dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum (III) (24MeSAlq) material, having bulky substituents, was prepared in one-step reaction and was characterized. The photoluminescent (PL) spectrum of 24MeSAlq shows the largest hypsochromic shift exhibiting the maximum wavelength at the peak of 461 nm among the blue-emitting q 2AlOR-type complexes (q = 8-quinolinolato ligand and OR = aryloxy or alkoxy ligand) reported. The deep blue device composed of ITO/2-TNATA (60 nm)/NPB (15 nm)/24MeSAlq (20 nm)/Alq 3 (45 nm)/LiF (1 nm)/Al (100 nm), which uses 24MeSAlq as a hole-blocking layer and applies a principle efficiently confining an exciton recombination zone into a hole transporting layer, shows the maximum electroluminescent (EL) at the peak of 446 nm originating from the NPB emissive layer. This is attributed to an excellent hole-blocking property due to the high HOMO (highest occupied molecular orbital) energy level (6.14 eV).
ISSN:0022-328X
1872-8561
DOI:10.1016/j.jorganchem.2006.02.002