Ion-implanted GaN junction field effect transistor

Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). p-type and n-type doping was achieved with Ca and Si implantation, respectively, followed by a 1150 °C rapid thermal anneal. A refractory W gate contact was employed that allows the p-gat...

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Bibliographic Details

Published in:	Applied physics letters Vol. 68; no. 16; pp. 2273 - 2275
Main Authors:	Zolper, J. C., Shul, R. J., Baca, A. G., Wilson, R. G., Pearton, S. J., Stall, R. A.
Format:	Journal Article
Language:	English
Published:	15-04-1996
Online Access:	Get full text
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