Ion-implanted GaN junction field effect transistor
Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). p-type and n-type doping was achieved with Ca and Si implantation, respectively, followed by a 1150 °C rapid thermal anneal. A refractory W gate contact was employed that allows the p-gat...
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| Published in: | Applied physics letters Vol. 68; no. 16; pp. 2273 - 2275 |
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| Main Authors: | , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
15-04-1996
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| Online Access: | Get full text |
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| Abstract | Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). p-type and n-type doping was achieved with Ca and Si implantation, respectively, followed by a 1150 °C rapid thermal anneal. A refractory W gate contact was employed that allows the p-gate region to be self-aligned to the gate contact. A gate turn-on voltage of 1.84 V at 1 mA/mm of gate current was achieved. For a ∼1.7 μm×50 μm JFET with a −6 V threshold voltage, a maximum transconductance of 7 mS/mm at VGS=− 2V and saturation current of 33 mA/mm at VGS=0 V were measured. These results were limited by excess access resistance and can be expected to be improved with optimized n+ implants in the source and drain regions. |
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| AbstractList | Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). p-type and n-type doping was achieved with Ca and Si implantation, respectively, followed by a 1150 °C rapid thermal anneal. A refractory W gate contact was employed that allows the p-gate region to be self-aligned to the gate contact. A gate turn-on voltage of 1.84 V at 1 mA/mm of gate current was achieved. For a ∼1.7 μm×50 μm JFET with a −6 V threshold voltage, a maximum transconductance of 7 mS/mm at VGS=− 2V and saturation current of 33 mA/mm at VGS=0 V were measured. These results were limited by excess access resistance and can be expected to be improved with optimized n+ implants in the source and drain regions. |
| Author | Baca, A. G. Pearton, S. J. Zolper, J. C. Stall, R. A. Shul, R. J. Wilson, R. G. |
| Author_xml | – sequence: 1 givenname: J. C. surname: Zolper fullname: Zolper, J. C. – sequence: 2 givenname: R. J. surname: Shul fullname: Shul, R. J. – sequence: 3 givenname: A. G. surname: Baca fullname: Baca, A. G. – sequence: 4 givenname: R. G. surname: Wilson fullname: Wilson, R. G. – sequence: 5 givenname: S. J. surname: Pearton fullname: Pearton, S. J. – sequence: 6 givenname: R. A. surname: Stall fullname: Stall, R. A. |
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