Preparation of Cu(In,Ga)(S,Se) 2 thin films by sequential evaporation and annealing in sulfur atmosphere

• Published in: Solar energy materials and solar cells Vol. 95; no. 1; pp. 274 - 276
• Main Authors: Yamaguchi, Toshiyuki, Asai, Yasutaka, Oku, Naoyuki, Niiyama, Shigetoshi, Imanishi, Toshito, Nakamura, Shigeyuki
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 2011; Elsevier
• Subjects: Applied sciences; Cu(In,Ga)(S,Se) 2 thin film; Direct energy conversion and energy accumulation; Electrical engineering. Electrical power engineering; Electrical power engineering; Energy; Exact sciences and technology; H 2S; Natural energy; Photoelectric conversion; Photovoltaic conversion; Sequential evaporation; Solar cell; Solar cells. Photoelectrochemical cells; Solar energy; Ternary compound; Ternary compound; Solar cell; Sequential evaporation; H 2S; Cu(In,Ga)(S,Se) 2 thin film; Annealing; Heat treatment; Indium selenides; H; Gallium sulfide; Thin film; Copper selenides; Cu(In,Ga)(S,Se); S; Copper sulfide; Sulfur; Indium sulfide; Gallium selenides
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2010.05.011

Cu(In,Ga)(S,Se)
2 thin films with high Ga/III ratio (around 0.8) were prepared by sequential evaporation from CuGaSe
2, CuInSe
2, In
2Se
3 and Ga
2Se
3 compounds and then annealing in H
2S gas atmosphere. The annealing temperature was varied from 400 to 500
°C. These samples were characterized by means of XRF, EPMA, XRD and SEM. The S/(S+Se) mole ratio in the thin films increased with increase in the annealing temperature, keeping the Cu, In and Ga contents nearly constant. The open circuit voltage increased and the short circuit current density decreased with increase in the annealing temperature. The best solar cell using Cu(In,Ga)(S,Se)
2 thin film with Ga/(In+Ga)=0.79 and S/(S+Se)=0.11 annealed at 400
°C demonstrated
V
oc=535
mV,
I
sc=13.3
mA/cm
2, FF=0.61 and efficiency=4.34% without AR-coating.