Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents

• Published in: Technical physics letters Vol. 47; no. 5; pp. 368 - 371
• Main Authors: Shashkin, I. S., Leshko, A. Yu, Shamakhov, V. V., Romanovich, D. N., Kapitonov, V. A., Bakhvalov, K. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-05-2021; Springer Nature B.V
• Subjects: Classical and Continuum Physics; Heterostructures; Physics; Physics and Astronomy; Pulsed current; Semiconductor lasers; Waveguides; single-mode lasers; mesa-stripe design; semiconductor lasers; heterostructure
• ISSN: 1063-7850; 1090-6533
• DOI: 10.1134/S1063785021040155

Characteristics of semiconductor lasers based on asymmetric heterostructures with broadened lateral waveguide of mesa-stripe design have been studied at ultrahigh levels of pulsed current pumping. A peak power of 5.1 W was demonstrated at a drive current amplitude of 10 A. Three types of spatial dynamics of laser emission were determined: slow (~200 ns) rearrangement of the intensity along the lateral near field is characteristic of the initial level of drive currents, fast processes of mode competition (~10 ns) are characteristic of moderate drive currents, and rearrangements are not repeated from pulse to pulse, being of chaotic nature, at maximum drive currents.