Phase transformation in FeSi2 nanowires

• Published in: Journal of crystal growth Vol. 295; no. 2; pp. 166 - 171
• Main Authors: LIANG, S, ISLAM, R, SMITH, David J, BENNETT, P. A
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 01-10-2006
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystalline state (including molecular motions in solids); Crystallographic aspects of phase transformations; pressure effects; Exact sciences and technology; Materials science; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wires; Structure of solids and liquids; crystallography; Atomic force microscopy; Cubic lattices; Inorganic compounds; Semiconductor materials; Al. Nanowires; Phase transformations; Epitaxy; Al. Epitaxy; Transition element compounds; Binary compounds; Experimental study; Thickness; Interfaces; Bl. Nanomaterials; Self-assembly; Transmission electron microscopy; Orthorhombic lattices; Nanowires; Thermal annealing; Al. Phase transformation; Iron silicides; Nanostructured materials
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.05.076

We report the formation of beta-FeSi2 nanowires (NWs) on Si(110), produced by annealing s-FeSi2 NWs at 800 deg C. These two phases of iron silicide are semiconducting and metallic, respectively, in thin film form. The s-phase NWs are formed by reactive deposition at 700 deg C and have average dimensions of 5nm thickX8nm wideX3mum long. Both are endotaxial, meaning they grow into the substrate along inclined Si{111} planes. The transformation temperature is higher than observed in thin films, due to the small thickness and large interface area of the NWs, which stabilize the s-phase.