LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System

In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregati...

Full description

Saved in:

Bibliographic Details
Published in:	Journal of electronic materials Vol. 45; no. 12; pp. 6171 - 6176
Main Authors:	Tang, Y. K., Hsu, Y. C., Lin, E. J., Hu, Y. J., Liu, C. Y.
Format:	Journal Article
Language:	English
Published:	New York Springer US 01-12-2016 Springer Nature B.V
Subjects:	Characterization and Evaluation of Materials Chemistry and Materials Science Die casting Electronics and Microelectronics Instrumentation Lead free solders Materials Science Optical and Electronic Materials Solid State Physics Studies Die-attachment lead-free solder partial pressure Sn-Bi-Zn solder die strength
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Abstract	In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.
AbstractList	In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers.
Author	Hsu, Y. C. Lin, E. J. Tang, Y. K. Liu, C. Y. Hu, Y. J.
Author_xml	– sequence: 1 givenname: Y. K. surname: Tang fullname: Tang, Y. K. organization: Department of Chemical Engineering and Materials Engineering, National Central University – sequence: 2 givenname: Y. C. surname: Hsu fullname: Hsu, Y. C. organization: Department of Chemical Engineering and Materials Engineering, National Central University – sequence: 3 givenname: E. J. surname: Lin fullname: Lin, E. J. organization: Department of Chemical Engineering and Materials Engineering, National Central University – sequence: 4 givenname: Y. J. surname: Hu fullname: Hu, Y. J. organization: Department of Chemical Engineering and Materials Engineering, National Central University – sequence: 5 givenname: C. Y. surname: Liu fullname: Liu, C. Y. email: chengyiarnold@hotmail.com, chengyi@cc.ncu.edu organization: Department of Chemical Engineering and Materials Engineering, National Central University
BookMark	eNp1kEtLxDAUhYOM4MzoD3AXcB0nN83L5TxVKLiogrgJaZuOHZx0TNrF_Htb6sKNq8uB75wL3wxNfOMdQrdA74FStYgAUnJCQRKutSDqAk1B8ISAlu8TNKWJBCJYIq7QLMYDpSBAwxRt0u0Gb2pHVo0vXYkbj9tPh5f7xbrDWZfHNtjW4fyMLc48WdUfnmQeD3Tt9zg7x9Ydr9FlZb-iu_m9c_S2276un0j68vi8XqakSEC2xFZWU5uzkglVFVapss-F40JKoaQWzD3YRDsrRCEkq3JbOlUJzphSNuegkjm6G3dPofnuXGzNoemC718a0JxxpoHTnoKRKkITY3CVOYX6aMPZADWDLDPKMr0sM8gywzIbO7Fn_d6FP8v_ln4AzX9rhQ
CODEN	JECMA5
CitedBy_id	crossref_primary_10_1016_j_matchemphys_2020_122960
Cites_doi	10.7567/JJAP.53.102101 10.1109/TCPMT.2010.2100432 10.1016/j.jallcom.2011.09.024 10.1016/S0925-8388(02)01168-4 10.1016/j.jallcom.2014.08.122 10.1016/S0968-4328(97)00057-7 10.1109/33.87322 10.1557/jmr.2007.0234 10.1016/j.jallcom.2009.04.108 10.1016/j.matchar.2006.05.013 10.1007/s10853-015-9352-y 10.1007/s11669-000-0019-1 10.1007/s11664-001-0133-9 10.1557/JMR.2007.0346 10.1016/S0254-0584(01)00298-X 10.1016/j.jallcom.2014.11.173 10.1016/j.jallcom.2004.12.052 10.1007/s10853-013-7905-5
ContentType	Journal Article
Copyright	The Minerals, Metals & Materials Society 2016 Journal of Electronic Materials is a copyright of Springer, 2016.
Copyright_xml	– notice: The Minerals, Metals & Materials Society 2016 – notice: Journal of Electronic Materials is a copyright of Springer, 2016.
DBID	AAYXX CITATION 3V. 7XB 88I 8AF 8AO 8FE 8FG 8FK 8G5 ABJCF ABUWG AFKRA ARAPS AZQEC BENPR BGLVJ CCPQU D1I DWQXO GNUQQ GUQSH HCIFZ KB. L6V M2O M2P M7S MBDVC P5Z P62 PDBOC PQEST PQQKQ PQUKI PTHSS Q9U S0X
DOI	10.1007/s11664-016-4885-7
DatabaseName	CrossRef ProQuest Central (Corporate) ProQuest Central (purchase pre-March 2016) Science Database (Alumni Edition) STEM Database ProQuest Pharma Collection ProQuest SciTech Collection ProQuest Technology Collection ProQuest Central (Alumni) (purchase pre-March 2016) Research Library (Alumni Edition) Materials Science & Engineering Collection ProQuest Central (Alumni) ProQuest Central UK/Ireland Advanced Technologies & Aerospace Database‎ (1962 - current) ProQuest Central Essentials AUTh Library subscriptions: ProQuest Central Technology Collection ProQuest One Community College ProQuest Materials Science Collection ProQuest Central ProQuest Central Student Research Library Prep SciTech Premium Collection ProQuest Materials Science Database ProQuest Engineering Collection ProQuest research library Science Database ProQuest Engineering Database Research Library (Corporate) ProQuest Advanced Technologies & Aerospace Database ProQuest Advanced Technologies & Aerospace Collection Materials Science Collection ProQuest One Academic Eastern Edition (DO NOT USE) ProQuest One Academic ProQuest One Academic UKI Edition Engineering Collection ProQuest Central Basic SIRS Editorial
DatabaseTitle	CrossRef Research Library Prep ProQuest Central Student Technology Collection ProQuest Advanced Technologies & Aerospace Collection ProQuest Central Essentials SIRS Editorial Materials Science Collection ProQuest AP Science ProQuest Central (Alumni Edition) SciTech Premium Collection ProQuest One Community College Research Library (Alumni Edition) ProQuest Pharma Collection ProQuest Central ProQuest Engineering Collection ProQuest Central Korea Materials Science Database ProQuest Research Library Engineering Collection ProQuest Materials Science Collection Advanced Technologies & Aerospace Collection Engineering Database ProQuest Science Journals (Alumni Edition) ProQuest Central Basic ProQuest Science Journals ProQuest One Academic Eastern Edition ProQuest Technology Collection ProQuest SciTech Collection Advanced Technologies & Aerospace Database ProQuest One Academic UKI Edition Materials Science & Engineering Collection ProQuest One Academic ProQuest Central (Alumni)
DatabaseTitleList	Research Library Prep
DeliveryMethod	fulltext_linktorsrc
Discipline	Engineering
EISSN	1543-186X
EndPage	6176
ExternalDocumentID	4258913341 10_1007_s11664_016_4885_7
Genre	Feature
GroupedDBID	-4Y -58 -5G -BR -EM -Y2 -~C -~X .4S .86 .DC .VR 06C 06D 0R~ 0VY 199 1N0 1SB 2.D 203 28- 29K 2J2 2JN 2JY 2KG 2KM 2LR 2VQ 2~H 30V 3V. 4.4 406 408 40D 40E 5GY 5VS 67Z 6NX 78A 88I 8AF 8AO 8FE 8FG 8FW 8G5 8TC 8UJ 95- 95. 95~ 96X AABHQ AABYN AAFGU AAGCJ AAHNG AAIAL AAIKT AAJKR AANZL AARHV AARTL AATNV AATVU AAUCO AAUYE AAWCG AAYFA AAYIU AAYQN AAYTO ABDZT ABECU ABEFU ABFGW ABFTD ABFTV ABHLI ABHQN ABJCF ABJNI ABJOX ABKAS ABKCH ABMNI ABMQK ABNWP ABQBU ABSXP ABTAH ABTEG ABTHY ABTKH ABTMW ABULA ABUWG ABWNU ABXPI ACBEA ACBMV ACBRV ACBXY ACBYP ACGFO ACGFS ACGOD ACHSB ACHXU ACIGE ACIHN ACIPQ ACIWK ACKNC ACMDZ ACMLO ACOKC ACOMO ACREN ACTTH ACVWB ACWMK ADHHG ADHIR ADINQ ADKNI ADKPE ADMDM ADOXG ADRFC ADTPH ADURQ ADYFF ADYOE ADZKW AEAQA AEBTG AEEQQ AEFTE AEGAL AEGNC AEJHL AEJRE AEKMD AENEX AEOHA AEPYU AESKC AESTI AETLH AEVLU AEVTX AEXYK AFEXP AFGCZ AFKRA AFLOW AFNRJ AFQWF AFWTZ AFYQB AFZKB AGAYW AGDGC AGGBP AGGDS AGJBK AGMZJ AGQMX AGWIL AGWZB AGYKE AHAVH AHBYD AHKAY AHSBF AHYZX AIAKS AIIXL AILAN AIMYW AITGF AJBLW AJDOV AJGSW AJRNO AJZVZ AKQUC ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMTXH AMXSW AMYLF AMYQR AOCGG ARAPS ARCSS ARMRJ ASPBG AVWKF AXYYD AYJHY AZFZN AZQEC B-. BA0 BBWZM BDATZ BENPR BGLVJ BGNMA BPHCQ C1A CAG CCPQU COF CS3 CSCUP CZ9 D-I D1I DDRTE DNIVK DPUIP DU5 DWQXO E3Z EBLON EBS EDO EIOEI EJD ESBYG FEDTE FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC G-Y G-Z G8K GGCAI GGRSB GJIRD GNUQQ GNWQR GQ6 GQ7 GUQSH HCIFZ HF~ HG5 HG6 HMJXF HRMNR HVGLF HZ~ I-F IJ- IKXTQ ITM IWAJR IXC IXE IZQ I~X I~Z J-C J0Z JBSCW JZLTJ KB. KC. KDC KOV L6V LLZTM M2O M2P M2Q M4Y M7S MA- MK~ N2Q N9A NB0 NDZJH NF0 NPVJJ NQJWS NU0 O9- O93 O9G O9I O9J OAM P19 P2P P62 P9N PDBOC PF0 PK8 PQQKQ PROAC PT4 PT5 PTHSS Q2X QF4 QM1 QN7 QO4 QOK QOR QOS R4E R89 R9I RHV RNI RNS ROL RPX RSV RWL RXW RZK S0X S16 S1Z S26 S27 S28 S3B SAP SCG SCLPG SCM SDH SDM SHX SISQX SNE SNPRN SNX SOHCF SOJ SPISZ SQXTU SRMVM SSLCW STPWE SZN T13 T16 TAE TSG TSK TSV TUC TUS TWZ U2A UG4 UNUBA UOJIU UTJUX UZXMN VC2 VFIZW W48 W4F WK8 XFK YLTOR Z45 Z5O Z7R Z7S Z7V Z7W Z7X Z7Y Z7Z Z83 Z85 Z88 Z8M Z8N Z8P Z8Q Z8R Z8T Z8W Z8Z Z92 ZE2 ZMTXR ZY4 ~EX AACDK AAEOY AAJBT AASML AAYXX AAYZH ABAKF ABDPE ACAOD ACDTI ACZOJ AEFQL AEMSY AFBBN AGJZZ AGQEE AGRTI AIGIU CITATION H13 SJYHP 7XB 8FK MBDVC PQEST PQUKI Q9U
ID	FETCH-LOGICAL-c316t-afa80ab2d257fca77da80ce4566576852e9a38ea55c562fbade7f542277ab4173
IEDL.DBID	AEJHL
ISSN	0361-5235
IngestDate	Tue Nov 19 05:57:16 EST 2024 Thu Nov 21 22:08:30 EST 2024 Sat Dec 16 12:02:14 EST 2023
IsPeerReviewed	true
IsScholarly	true
Issue	12
Keywords	Die-attachment lead-free solder partial pressure Sn-Bi-Zn solder die strength
Language	English
LinkModel	DirectLink
MergedId	FETCHMERGED-LOGICAL-c316t-afa80ab2d257fca77da80ce4566576852e9a38ea55c562fbade7f542277ab4173
PQID	1842428140
PQPubID	48394
PageCount	6
ParticipantIDs	proquest_journals_1842428140 crossref_primary_10_1007_s11664_016_4885_7 springer_journals_10_1007_s11664_016_4885_7
PublicationCentury	2000
PublicationDate	2016-12-01
PublicationDateYYYYMMDD	2016-12-01
PublicationDate_xml	– month: 12 year: 2016 text: 2016-12-01 day: 01
PublicationDecade	2010
PublicationPlace	New York
PublicationPlace_xml	– name: New York – name: Warrendale
PublicationTitle	Journal of electronic materials
PublicationTitleAbbrev	Journal of Elec Materi
PublicationYear	2016
Publisher	Springer US Springer Nature B.V
Publisher_xml	– name: Springer US – name: Springer Nature B.V
References	JeeYKKoYHYuJJ. Mater. Res.200722187910.1557/jmr.2007.0234 YoshimuraNVacuum technology: practice for scientific instruments2007BerlinSpringer ShresthaTGollapudiSCharitIMurtyKLJ. Mater. Sci.201449212710.1007/s10853-013-7905-5 KimYSKimKSHwangCWSuganumaKJ. Alloy. Compd.200335223710.1016/S0925-8388(02)01168-4 MiaoHWDuhJGMater. Chem. Phys.20017125510.1016/S0254-0584(01)00298-X SandlerSIChemical, biochemical, and engineering thermodynamics2006HobokenWiley ZhouJSunYXueFJ. Alloy. Compd.200539726010.1016/j.jallcom.2004.12.052 Sato-IwanagaJLiuYDuttonRWTsuchiyaHYokogawaTJpn. J. Appl. Phys.20145310210110.7567/JJAP.53.102101 ManikamVRCheongKYTransIEEECompon. Pack. Manuf. Technol.2011145710.1109/TCPMT.2010.2100432 El-DalyAASwilemYMakledMHEl-ShaarawyMGAbdrabohAMJ. Alloy. Compd.200948413410.1016/j.jallcom.2009.04.108 ShuYRajathuraiKGaoFCuiQGuZJ. Alloy. Compd.201562639110.1016/j.jallcom.2014.11.173 LeeCCWangCYMatijasevicGSTransIEEECompon. Hybrids. Manuf. Technol.19911440710.1109/33.87322 MüllerCJBushlyaVGhasemiMLidinSValldorMWangFJ. Mater. Sci.201550780810.1007/s10853-015-9352-y YawsCLThe Yaws handbook of vapor pressure: Antoine coefficients2015HoustonGulf Professional Publishing FrongiaFPilloniMScanoAArduACannasCMusinuABorzoneGDelsanteSNovakovicREnnasGJ. Alloy. Compd.2015623710.1016/j.jallcom.2014.08.122 KotadiaHRMokhtariOClodeMPGreenMAMannanSHJ. Alloy. Compd.201251117610.1016/j.jallcom.2011.09.024 MalakhovDVLiuXJOhnumaIIshidaKJ. Phase Equilib.20002151410.1007/s11669-000-0019-1 SongHGAhnJPMorrisJWJ. Electron. Mater.200130108310.1007/s11664-001-0133-9 FawzyAMater. Charact.20075832333110.1016/j.matchar.2006.05.013 JeeYKYuJKoYHJ. Mater. Res.200722277610.1557/JMR.2007.0346 IveyDGMicron19982928110.1016/S0968-4328(97)00057-7 VR Manikam (4885_CR2) 2011; 1 CL Yaws (4885_CR21) 2015 YS Kim (4885_CR15) 2003; 352 HW Miao (4885_CR10) 2001; 71 AA El-Daly (4885_CR17) 2009; 484 J Zhou (4885_CR16) 2005; 397 J Sato-Iwanaga (4885_CR1) 2014; 53 F Frongia (4885_CR8) 2015; 623 CC Lee (4885_CR3) 1991; 14 T Shrestha (4885_CR7) 2014; 49 A Fawzy (4885_CR11) 2007; 58 DG Ivey (4885_CR4) 1998; 29 DV Malakhov (4885_CR18) 2000; 21 HR Kotadia (4885_CR14) 2012; 511 N Yoshimura (4885_CR20) 2007 Y Shu (4885_CR9) 2015; 626 CJ Müller (4885_CR6) 2015; 50 YK Jee (4885_CR12) 2007; 22 YK Jee (4885_CR13) 2007; 22 SI Sandler (4885_CR19) 2006 HG Song (4885_CR5) 2001; 30
References_xml	– volume: 53 start-page: 102101 year: 2014 ident: 4885_CR1 publication-title: Jpn. J. Appl. Phys. doi: 10.7567/JJAP.53.102101 contributor: fullname: J Sato-Iwanaga – volume-title: Vacuum technology: practice for scientific instruments year: 2007 ident: 4885_CR20 contributor: fullname: N Yoshimura – volume-title: Chemical, biochemical, and engineering thermodynamics year: 2006 ident: 4885_CR19 contributor: fullname: SI Sandler – volume: 1 start-page: 457 year: 2011 ident: 4885_CR2 publication-title: Compon. Pack. Manuf. Technol. doi: 10.1109/TCPMT.2010.2100432 contributor: fullname: VR Manikam – volume: 511 start-page: 176 year: 2012 ident: 4885_CR14 publication-title: J. Alloy. Compd. doi: 10.1016/j.jallcom.2011.09.024 contributor: fullname: HR Kotadia – volume: 352 start-page: 237 year: 2003 ident: 4885_CR15 publication-title: J. Alloy. Compd. doi: 10.1016/S0925-8388(02)01168-4 contributor: fullname: YS Kim – volume: 623 start-page: 7 year: 2015 ident: 4885_CR8 publication-title: J. Alloy. Compd. doi: 10.1016/j.jallcom.2014.08.122 contributor: fullname: F Frongia – volume: 29 start-page: 281 year: 1998 ident: 4885_CR4 publication-title: Micron doi: 10.1016/S0968-4328(97)00057-7 contributor: fullname: DG Ivey – volume: 14 start-page: 407 year: 1991 ident: 4885_CR3 publication-title: Compon. Hybrids. Manuf. Technol. doi: 10.1109/33.87322 contributor: fullname: CC Lee – volume: 22 start-page: 1879 year: 2007 ident: 4885_CR12 publication-title: J. Mater. Res. doi: 10.1557/jmr.2007.0234 contributor: fullname: YK Jee – volume: 484 start-page: 134 year: 2009 ident: 4885_CR17 publication-title: J. Alloy. Compd. doi: 10.1016/j.jallcom.2009.04.108 contributor: fullname: AA El-Daly – volume: 58 start-page: 323 year: 2007 ident: 4885_CR11 publication-title: Mater. Charact. doi: 10.1016/j.matchar.2006.05.013 contributor: fullname: A Fawzy – volume: 50 start-page: 7808 year: 2015 ident: 4885_CR6 publication-title: J. Mater. Sci. doi: 10.1007/s10853-015-9352-y contributor: fullname: CJ Müller – volume: 21 start-page: 514 year: 2000 ident: 4885_CR18 publication-title: J. Phase Equilib. doi: 10.1007/s11669-000-0019-1 contributor: fullname: DV Malakhov – volume: 30 start-page: 1083 year: 2001 ident: 4885_CR5 publication-title: J. Electron. Mater. doi: 10.1007/s11664-001-0133-9 contributor: fullname: HG Song – volume: 22 start-page: 2776 year: 2007 ident: 4885_CR13 publication-title: J. Mater. Res. doi: 10.1557/JMR.2007.0346 contributor: fullname: YK Jee – volume: 71 start-page: 255 year: 2001 ident: 4885_CR10 publication-title: Mater. Chem. Phys. doi: 10.1016/S0254-0584(01)00298-X contributor: fullname: HW Miao – volume: 626 start-page: 391 year: 2015 ident: 4885_CR9 publication-title: J. Alloy. Compd. doi: 10.1016/j.jallcom.2014.11.173 contributor: fullname: Y Shu – volume: 397 start-page: 260 year: 2005 ident: 4885_CR16 publication-title: J. Alloy. Compd. doi: 10.1016/j.jallcom.2004.12.052 contributor: fullname: J Zhou – volume-title: The Yaws handbook of vapor pressure: Antoine coefficients year: 2015 ident: 4885_CR21 contributor: fullname: CL Yaws – volume: 49 start-page: 2127 year: 2014 ident: 4885_CR7 publication-title: J. Mater. Sci. doi: 10.1007/s10853-013-7905-5 contributor: fullname: T Shrestha
SSID	ssj0015181
Score	2.1977262
Snippet	In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is...
SourceID	proquest crossref springer
SourceType	Aggregation Database Publisher
StartPage	6171
SubjectTerms	Characterization and Evaluation of Materials Chemistry and Materials Science Die casting Electronics and Microelectronics Instrumentation Lead free solders Materials Science Optical and Electronic Materials Solid State Physics Studies
Title	LED Die-Bonded on the Ag/Cu Substrate by a Sn-BiZn-Sn Bonding System
URI	https://link.springer.com/article/10.1007/s11664-016-4885-7 https://www.proquest.com/docview/1842428140
Volume	45
hasFullText	1
inHoldings	1
isFullTextHit
isPrint
link	http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3NS8MwFH_odtGD3-J0Sg6elKhNm6Y9bmvHlDGEKYiXkrSpDCETtx38733p2m2KHvRUQtNHeXl5H3kvvwdwrvIwCDPGqQ59DwMUxWngaAeHRXzhhDKzZ7q9oRg8BVFsYXLY4ujCvF5VGclCUS_vujm-bwsmfIoyx6lYhzqaHo6yXW_Fd73-InfAnaI1Kapmx4ZZvMpl_kTkqzVaupjfsqKFselu_-c3d2CrdC1Jay4Lu7CmzR5srgAO7kPUjyMSjTS13YR1RsaGoANIWi_XnRmxOqTAqiXqg0gyNLQ9ejZ0aIidjd-TObz5ATx244dOj5Z9FGjqOv6UylwGN1IxXBKRp1KIDMepRtfJt9EGZzqUbqAl5yl6Q7mSmRY59xgTQirPEe4h1MzY6CMgSudozdJA2TDO9YQSLm5wpOOy3OVKNeCi4mfyNofLSJbAyJY1iS0ps6xJRAOaFceTcudMEow40WuwOFwNuKxYvPL6N2LHf5p9AhvMrlFRl9KE2vR9pk9hfZLNzkpxwmf3dtC-_wR9vsE0
link.rule.ids	315,782,786,27933,27934,41073,42142,48344,48347,48357,49649,49652,49662,52153
linkProvider	Springer Nature
linkToHtml	http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV07T8MwED7RdgAG3ohCAQ9MIAscx3EylqalFaVLi4RYIjtxUJcU0Xbg33NOE1oQDDBacS7R-XwP3_k7gAudBn6QOIKawHMxQNGC-swwHObxBQtUYs90u0M5ePLDtoXJ4eVdmLzavUxJ5pp6edmNeZ6tmPAoCp2gsgI1Fz-Aolxr9kZ3nc_kgWB5b1LUzczGWaJMZv5E5Ks5WvqY39KiubXpbP_rP3dgq3AuSXMhDbuwZrI92FyBHNyHsN8OSTg21PYTNgmZZARdQNJ8uW7NidUiOVot0e9EkWFGb8fPGR1mxM7G98kC4PwAHjvtUatLi04KNObMm1GVKv9GaQcXRaaxkjLBcWzQefJsvCEcEyjuGyVEjP5QqlViZCpcx5FSaZdJfgjVbJKZIyDapGjPYl_bQI67UkuOWxzpcCflQus6XJYMjV4XgBnREhrZsiayRWWWNZGsQ6NkeVTsnWmEMSf6DRaJqw5XJYtXHv9G7PhPs89hvTt66Ef93uD-BDYcu155lUoDqrO3uTmFyjSZnxWy9QEhGMOS
linkToPdf	http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LT8MwDLZgkxAceCMGA3LgBIpGH2naExprpwHThDSQEJcqaVO0Szax7cC_x-mDDQQHxDFqalWOE_ur7S8A5zIL_CC1GVWB5yJAkYz6lrJwmOMLKxCp-afbG_LBsx9GhibnuuqFyavdq5Rk0dNgWJr0rDVJs9ai8c3yPFM94VE0QEb5KtRdBDJo6PV2dNfrfyYSmJXfU4rntGUwF6sSmz8J-eqaFvHmtxRp7nm6W__-5m3YLINO0i6sZAdWlN6FjSUqwj0I-1FIwpGi5p5hlZKxJhgakvZrqzMn5nTJWWyJfCeCDDW9Gb1oOtTEzMb3SUF8vg9P3eix06PlDQs0cSxvRkUm_CshbVwsniWC8xTHicKgyjM4hNkqEI6vBGMJxkmZFKniGXNtm3MhXYs7B1DTY60OgUiVoZ9LfGkAnuNyyR3c-ijHsTOHSdmAi0q58aQg0ogXlMlGNbEpNjOqiXkDmpX643JPTWPEohhPGIauBlxW6l56_Juwoz_NPoO1h7Ab928H98ewbpvlyotXmlCbvc3VCaxO0_lpaWYfq8fMVQ
openUrl	ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=LED+Die-Bonded+on+the+Ag%2FCu+Substrate+by+a+Sn-BiZn-Sn+Bonding+System&rft.jtitle=Journal+of+electronic+materials&rft.au=Tang%2C+Y.+K.&rft.au=Hsu%2C+Y.+C.&rft.au=Lin%2C+E.+J.&rft.au=Hu%2C+Y.+J.&rft.date=2016-12-01&rft.pub=Springer+US&rft.issn=0361-5235&rft.eissn=1543-186X&rft.volume=45&rft.issue=12&rft.spage=6171&rft.epage=6176&rft_id=info:doi/10.1007%2Fs11664-016-4885-7&rft.externalDocID=10_1007_s11664_016_4885_7
thumbnail_l	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0361-5235&client=summon
thumbnail_m	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0361-5235&client=summon
thumbnail_s	http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0361-5235&client=summon