Localization of Excitons on Planar Defects in Semiconductor Crystals

• Published in: JETP letters Vol. 112; no. 4; pp. 230 - 233
• Main Authors: Mahmoodian, M. M., Chaplik, A. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-08-2020; Springer Nature B.V
• Subjects: Atomic; Biological and Medical Physics; Biophysics; Condensed Matter; Crystal defects; Dielectric strength; Excitons; Localization; Molecular; Optical and Plasma Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Quantum Information Technology; Semiconductor crystals; Solid State Physics; Spintronics
• ISSN: 0021-3640; 1090-6487
• DOI: 10.1134/S0021364020160080

Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −
V
δ(
z
), are studied theoretically. The ratio of the amplitude
V
to
e
2
/
ε
(
ε
is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with
V
according to power laws
V
1/4
and
V
in the cases of weak and strong localization, respectively.