Dynamic Nuclear Polarization in III–V Semiconductors

• Published in: Applied magnetic resonance Vol. 39; no. 1-2; pp. 185 - 204
• Main Authors: Kaur, Gurneet, Denninger, G.
• Format: Journal Article
• Language: English
• Published: Vienna Springer Vienna 01-10-2010; Springer Nature B.V
• Subjects: Atoms and Molecules in Strong Fields; Doping; Electron paramagnetic resonance; Electron spin; Electrons; Group III-V semiconductors; Indium phosphides; Laser Matter Interaction; Magnetic fields; NMR; Nuclear magnetic resonance; Nuclear relaxation; Nuclear spin; Organic Chemistry; Physical Chemistry; Physics; Physics and Astronomy; Polarization (spin alignment); Quantum computing; Semiconductors; Solid State Physics; Spectroscopy/Spectrometry; Spin resonance; Temperature; Wave functions; Zincblende; Electron Spin Resonance; Dynamic Nuclear Polarization; Electron Spin Resonance Line; GaAs; Dynamic Nuclear Polarization Enhancement
• ISSN: 0937-9347; 1613-7507
• DOI: 10.1007/s00723-010-0155-7

We report on electron spin resonance, nuclear magnetic resonance and Overhauser shift experiments on two of the most commonly used III–V semiconductors, GaAs and InP. Localized electron centers in these semiconductors have extended wavefunctions and exhibit strong electron–nuclear hyperfine coupling with the nuclei in their vicinity. These interactions not only play a critical role in electron and nuclear spin relaxation mechanisms, but also result in transfer of spin polarization from the electron spin system to the nuclear spin system. This transfer of polarization, known as dynamic nuclear polarization (DNP), may result in an enhancement of the nuclear spin polarization by several orders of magnitude under suitable conditions. We determine the critical range of doping concentration and temperature conducive to DNP effects by studying these semiconductors with varying doping concentration in a wide temperature range. We show that the electron spin system in undoped InP exhibits electric current-induced spin polarization. This is consistent with model predictions in zinc-blende semiconductors with strong spin–orbit effects.