Development of dislocation-free ion-doped silicon layers

Development of dislocation-free ion-doped silicon layers

Possible suppression of the formation of residual extended defects in boron-implanted silicon is studied using a method that combines the effects of a threshold dose and annihilation of point defects on substitutional impurities. Implantation conditions are determined under which dislocation-free io...

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Bibliographic Details
Published in:Physics of the solid state Vol. 50; no. 8; pp. 1433 - 1437
Main Authors: Plebanovich, V. I., Belous, A. I., Chelyadinskiĭ, A. R., Odzhaev, V. B.
Format: Journal Article
Language:English
Published: Dordrecht SP MAIK Nauka/Interperiodica 2008
Springer Nature B.V
Subjects:
Defects and Impurity Centers
Dislocations
Physics
Physics and Astronomy
Physics of Strength
Point defects
Silicon
Solid State Physics
Substitutional impurities
61.72.Ji
61.80.-x
61.72.Tt
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Summary:Possible suppression of the formation of residual extended defects in boron-implanted silicon is studied using a method that combines the effects of a threshold dose and annihilation of point defects on substitutional impurities. Implantation conditions are determined under which dislocation-free ion-doped silicon layers are formed.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783408080088