First principles calculations of electronic and optical properties of InSe nanosheets doped with noble metal atoms

• Published in: Computational materials science Vol. 222; p. 112114
• Main Authors: Narin, P., All Abbas, J.M., Kutlu-Narin, E., Lisesivdin, S.B., Ozbay, E.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 05-04-2023
• Subjects: DFT; Electronic structure; GGA; InSe; Noble metal doping; Optical properties; GGA; Electronic structure; DFT; InSe; Optical properties; Noble metal doping
• ISSN: 0927-0256; 1879-0801
• DOI: 10.1016/j.commatsci.2023.112114

[Display omitted]
Monolayer Indium Selenide (ML-InSe) is studied for 4x4 supercell structure through ab initio calculations. The electronic and optical properties of ML-InSe for both pristine and substitutional doped ML-InSe with Palladium (Pd), Platinum (Pt), Silver (Ag), and Gold (Au) atoms have been calculated. With substitutional doping, ML-InSe has been observed to have a spin-dependent electronic structure. The flat energy bands near the Fermi level are observed in ML-InSe with doping elements placed in In site. The flat bands of d orbitals of some noble metal atoms are formed by the projected density of states (PDOS). The PDOS calculations show that the s-orbital of In and p-orbital of Se form the conduction band edge. The energetically favorable position of doping atoms is found to be the PtIn substitution atom according to formation energy calculations. For each studied structure, the bond length of the first neighbor of doping atoms in doped ML-InSe, static dielectric constant (ε0), refractive index, and energy band gap have been calculated. In the structure ML-InSe with AuSe, ε0 reaches ∼ 8.15. Another important result is that substitutional doping induces some peaks in the lower energy region of the imaginary part of the dielectric function. These peaks mainly refer to the absorption in related regions and may be important for the optoelectronic properties of ML-InSe.