Structural and electrical characterisations of rapid thermal annealed thin silicon oxide films on silicon

• Published in: Thin solid films Vol. 317; no. 1; pp. 219 - 222
• Main Authors: Chan, Y.M, Choo, C.K, Choi, W.K
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 01-04-1998; Elsevier Science
• Subjects: Annealing; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Insulators; Oxide; Physics; Silicon; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Oxide; Annealing; Silicon; CV characteristic; Thin films; Rapid thermal annealing; Inorganic compounds; Silicon oxides; Insulating materials; Binary compounds; Infrared spectra; Experimental study; IV characteristic
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(97)00518-X

An investigation of the structural and electrical properties of rapid thermal annealed silicon–silicon oxide (Si–SiO
2) systems has been carried out. The oxide thickness is between 200–500 Å. Infrared spectroscopy was used in the structural analysis. The electrical characterisations were carried out using the capacitance versus voltage (
C–
V) and the conductance versus voltage (
G–
V) methods. For the thermal oxides samples, it was found that in general, there is an increase in the number of fixed charges (
N
f) after rapid thermal annealing (RTA). Sample annealed at 700°C shows an increase in the interface trap density (
D
it) as compared to the as-grown sample. For samples annealed at 900°C and above, the
D
it decreased as compared with the unannealed sample. For oxides prepared with the r.f. sputtering technique, it was observed that the as-prepared sample was very leaky and it was not possible to carry out the
C–
V or
G–
V measurements. However, after RTA the insulating property and
D
it of the sputtered oxides improved significantly.