CdZnTe photodiode arrays for medical imaging

CdZnTe photodiode arrays for medical imaging

In this paper, we report on the design, fabrication, and performance of the first CdZnTe Schottky photodiode arrays for radiation detection. High pressure Bridgman-grown CdZnTe substrates with bulk resistivities in the range 10^sup 8^ to 10^sup 10^ ohm-cm were used. CdZnTe Schottky photodiodes were...

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Bibliographic Details
Published in:Journal of electronic materials Vol. 25; no. 8; pp. 1318 - 1322
Main Authors: Sudharsanan, R, Parodos, T, Ruzin, A, Nemirovsky, Y, Karam, N H
Format: Journal Article
Language:English
Published: Warrendale Springer Nature B.V 01-08-1996
Subjects:
Cadmium zinc telluride
Diodes
Gamma rays
Medical imaging
Radiation detectors
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Summary:In this paper, we report on the design, fabrication, and performance of the first CdZnTe Schottky photodiode arrays for radiation detection. High pressure Bridgman-grown CdZnTe substrates with bulk resistivities in the range 10^sup 8^ to 10^sup 10^ ohm-cm were used. CdZnTe Schottky photodiodes were formed with In and Ti/Au contacts. Diode arrays with pixel sizes from 1000 × 1000 µm to 100 × 100 µm? were fabricated. The diode's I-V characteristics exhibited low leakage current and high bulk resistivity; leakage current decreased as diode pixel size was reduced. Response of these detector arrays to high energy photons was uniform and their energy resolution improved with smaller pixel size. [PUBLICATION ABSTRACT]
Bibliography:ObjectType-Article-2
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content type line 23
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02655026