Formation conditions and atomic structure of the Si(111)-√19 Ni surface
We determined the formation conditions and atomic structure of the Si(111)-√19 Ni surface using Auger electron spectroscopy, reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The √19 phase can be produced by low temperature deposition followed by annealing...
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Published in: | Surface science Vol. 356; no. 1-3; pp. 53 - 58 |
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Main Authors: | , , |
Format: | Journal Article |
Language: | English |
Published: |
Lausanne
Elsevier B.V
10-06-1996
Amsterdam Elsevier Science New York, NY |
Subjects: | |
Online Access: | Get full text |
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Summary: | We determined the formation conditions and atomic structure of the Si(111)-√19 Ni surface using Auger electron spectroscopy, reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The √19 phase can be produced by low temperature deposition followed by annealing and quenching from above 860°C. It tends to coexist with a variable density 1 × 1-RC (ring cluster) phase. The intrinsic coverage of the √19 phase alone is approximately 0.15 monolayers, corresponding to three Ni atoms per √19 unit cell. Deposition at 550°C suppresses the 1 × 1-RC phase and creates a well-ordered √19 phase in coexistence with Si 7 × 7. Deposition at 350°C produces silicide islands in a matrix of Si 7 × 7. From high resolution STM images we determined the lattice registration of the √19 phase and present a model for its atomic structure. |
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ISSN: | 0039-6028 1879-2758 |
DOI: | 10.1016/0039-6028(96)00029-5 |