Surface Reactivity of the Au‐Si‐Ho Quasicrystalline 1/1 Approximant

Surface Reactivity of the Au‐Si‐Ho Quasicrystalline 1/1 Approximant

The oxidation of the (100) surface of Au‐Si‐Ho quasicrystalline approximant was studied using low‐energy electron diffraction and X‐ray photoelectron spectroscopy. The combination of these two techniques provides evidence for a Ho and Si surface segregation induced by O 2 adsorption, resulting in th...

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Bibliographic Details
Published in:Israel journal of chemistry
Main Authors: Mbajoun, Wilfried Bajoun, Huang, Yu‐Chin, Gebresenbut, Girma Hailu, Gómez, Cesar Pay, Fournée, Vincent, Ledieu, Julian
Format: Journal Article
Language:English
Published: Wiley-VCH Verlag 04-10-2023
Subjects:
Chemical Physics
Physics
Online Access:Get full text
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Summary:The oxidation of the (100) surface of Au‐Si‐Ho quasicrystalline approximant was studied using low‐energy electron diffraction and X‐ray photoelectron spectroscopy. The combination of these two techniques provides evidence for a Ho and Si surface segregation induced by O 2 adsorption, resulting in the loss of surface long‐range order.
ISSN:0021-2148
1869-5868
DOI:10.1002/ijch.202300118