Effects of thermal annealing on the band gap of GaInAsSb

Effects of thermal annealing on the band gap of GaInAsSb

In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium concentra...

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Bibliographic Details
Published in:Applied physics letters Vol. 86; no. 15; pp. 151120 - 151120-3
Main Authors: Dier, Oliver, Dachs, Susanne, Grau, Markus, Lin, Chun, Lauer, Christian, Amann, Markus-Christian
Format: Journal Article
Language:English
Published: United States American Institute of Physics 11-04-2005
Subjects:
ANNEALING
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
CRYSTAL GROWTH
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LAYERS
MATERIALS SCIENCE
MEV RANGE 10-100
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
THERMAL ANALYSIS
TIME DEPENDENCE
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Summary:In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium concentration, strain, and growth parameters such as temperature. For a 500 - nm -thick GaInAsSb bulk layer, a blueshift of 83 meV was found after annealing for 2 h at 520 ° C , whereas for MQW structures the maximum shift was 61 meV .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1900946