True dose rate physical mechanism of ELDRS effect in bipolar devices

• Published in: Microelectronics and reliability Vol. 76-77; pp. 703 - 707
• Main Authors: Pershenkov, V.S., Petrov, A.S., Bakerenkov, A.S., Ulimov, V.N., Felytsyn, V.A., Rodin, A.S., Belyakov, V.V., Telets, V.A., Shurenkov, V.V.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-09-2017
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2017.07.025

Physical mechanism of enhanced low dose rate sensitivity effect in bipolar devices is observed. It is shown, that the accumulation of the defects during low dose rate irradiation depends on the irradiation time only, while true dose rate effects contribution to enhanced low dose rate sensitivity effect is related with processes during post-irradiation annealing. The conversion model of low dose rate effect was used for numerical description of the radiation responses of input bias currents of bipolar operational amplifiers in wide range of dose rates.
•Physical mechanism of ELDRS effect in bipolar devices is observed.•The accumulation of the defects during low dose rate irradiation depends on the irradiation time only.•TDR effects contribution to ELDRS effect is related with processes during post-irradiation annealing.•The conversion model of low dose rate effect was used for numerical description.