LET Dependence of Single Event Transient Pulse-Widths in SOI Logic Cell

Single event transient (SET) pulse-widths were measured as a function of linear energy transfer (LET) by using pulse capture circuits and simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates the LET dependence of the pulse-widths.

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Bibliographic Details
Published in:	IEEE transactions on nuclear science Vol. 56; no. 1; pp. 202 - 207
Main Authors:	Makino, T., Kobayashi, D., Hirose, K., Yanagawa, Y., Saito, H., Ikeda, H., Takahashi, D., Ishii, S., Kusano, M., Onoda, S., Hirao, T., Ohshima, T.
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-02-2009 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Capture (nuclear) Carrier recombination Circuit simulation Circuit testing Circuits Devices Energy exchange Energy transfer Extraterrestrial measurements Logic Logic cell Pulse circuits Pulse inverters Pulse measurements Pulse width modulation inverters Simulation single event transient SOI Space vector pulse width modulation
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Description
Summary:	Single event transient (SET) pulse-widths were measured as a function of linear energy transfer (LET) by using pulse capture circuits and simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates the LET dependence of the pulse-widths.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2008.2009054