Solid state amorphization in the Co-Ti system

Application of a thermodynamic model shows that in the crystalline Co-crystalline Ti system amorphization can occur both along the Co-Ti interface and along (high angle) grain boundaries in the Co and Ti sublayers. The model also predicts a preferred composition and a certain limiting thickness for...

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Bibliographic Details
Published in:Thin solid films Vol. 345; no. 2; pp. 319 - 329
Main Authors: BENEDICTUS, R, TRAEHOLT, C, BÖTTGER, A, MITTEMEIJER, E. J
Format: Journal Article
Language:English
Published: Lausanne Elsevier Science 21-05-1999
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Summary:Application of a thermodynamic model shows that in the crystalline Co-crystalline Ti system amorphization can occur both along the Co-Ti interface and along (high angle) grain boundaries in the Co and Ti sublayers. The model also predicts a preferred composition and a certain limiting thickness for the amorphous product layer at the interface. These predictions are largely in agreement with experimental data obtained for Co-Ti multilayers at temperatures in the range 523-583 K. A parabolic growth behaviour is observed for the amorphous phase, suggesting diffusion controlled growth. The activation energy for the diffusion in the amorphous phase is (160 plus or minus 8) kJ/mol. Annealing the specimen for a relatively long time or at a relatively high temperature, causes the amorphous phase to crystallize into an intermetallic phase with a CsCl-type structure and an average composition of Co sub(40)Ti sub(60). The orientation relationship between the crystalline Co layers and the crystalline Co sub(40)Ti sub(60) phase was found to be Co(11 1 )/ /Co sub(40)Ti sub(60)(1 10) and Co[110]//Co sub(40)Ti sub(60)[111] or Co[110]//Co sub(40)Ti sub(60)[001].
Bibliography:ObjectType-Article-2
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content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)01419-9