Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency （RF） magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 102. The ret...

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Bibliographic Details
Published in:Chinese optics letters Vol. 10; no. 1; pp. 74 - 77
Main Author: 赵建伟 刘凤娟 孙建 黄海琴 胡佐富 张希清
Format: Journal Article
Language:English
Published: 01-01-2012
Subjects:
低功耗
初始状态
双极
基础
存储设备
开关特性
氧化锌
铂电阻
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Summary:Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency （RF） magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 102. The retention mea- surement indicates that the memory property of these devices can be maintained for a long time （over 104 s under 0.1-V durable stress）. Moreover, the operation voltages are very low, -0.4 V （OFF state） and 0.8 V （ON state）. A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.
Bibliography:Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency （RF） magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 102. The retention mea- surement indicates that the memory property of these devices can be maintained for a long time （over 104 s under 0.1-V durable stress）. Moreover, the operation voltages are very low, -0.4 V （OFF state） and 0.8 V （ON state）. A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.
31-1890/O3
ISSN:1671-7694
DOI:10.3788/COL201210.013102