Trends in DRAM dielectrics

Trends in DRAM dielectrics

We trace the development of the ON/ONO dielectric film and examine the potential of new dielectrics with high dielectric constants such as Ta/sub 2/O/sub 5/ and ferroelectric materials. We also examine hemispherical grained (HSG) polysilicon, which is an innovative way to increase the effective area...

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Bibliographic Details
Published in:IEEE circuits and devices magazine Vol. 13; no. 3; pp. 27 - 34
Main Authors: Tang, K.S., Lau, W.S., Samudra, G.S.
Format: Journal Article
Language:English
Published: IEEE 01-05-1997
Subjects:
Capacitance
Capacitors
Chemical vapor deposition
Dielectric materials
Electrodes
Ferroelectric materials
High-K gate dielectrics
Oxidation
Random access memory
Silicon
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Summary:We trace the development of the ON/ONO dielectric film and examine the potential of new dielectrics with high dielectric constants such as Ta/sub 2/O/sub 5/ and ferroelectric materials. We also examine hemispherical grained (HSG) polysilicon, which is an innovative way to increase the effective area of the capacitor.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:8755-3996
1558-1888
DOI:10.1109/101.589261