Temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

We have calculated the threshold current and its temperature (T) dependence in the range 200–400 K for AlGaAs quantum well lasers with 25-Å-wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening of the density of states function by fluctuations in the well...

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Bibliographic Details
Published in:Applied physics letters Vol. 52; no. 8; pp. 599 - 601
Main Authors: BLOOD, P, COLAK, S, KUCHARSKA, A. I
Format: Journal Article
Language:English
Published: Melville, NY American Institute of Physics 22-02-1988
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Summary:We have calculated the threshold current and its temperature (T) dependence in the range 200–400 K for AlGaAs quantum well lasers with 25-Å-wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening of the density of states function by fluctuations in the well width. The threshold current varies approximately linearly with T and the principal effect of broadening is to increase the threshold current causing a reduction in the fractional change of current with temperature. The apparent value of the parameter T0 is increased to ≊400 K, compared with ≊320 K without broadening. The calculations are compared with experimental data.
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.99647