Temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers
We have calculated the threshold current and its temperature (T) dependence in the range 200–400 K for AlGaAs quantum well lasers with 25-Å-wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening of the density of states function by fluctuations in the well...
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Published in: | Applied physics letters Vol. 52; no. 8; pp. 599 - 601 |
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Main Authors: | , , |
Format: | Journal Article |
Language: | English |
Published: |
Melville, NY
American Institute of Physics
22-02-1988
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Subjects: | |
Online Access: | Get full text |
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Summary: | We have calculated the threshold current and its temperature (T) dependence in the range 200–400 K for AlGaAs quantum well lasers with 25-Å-wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening of the density of states function by fluctuations in the well width. The threshold current varies approximately linearly with T and the principal effect of broadening is to increase the threshold current causing a reduction in the fractional change of current with temperature. The apparent value of the parameter T0 is increased to ≊400 K, compared with ≊320 K without broadening. The calculations are compared with experimental data. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.99647 |