Interlayer tunnel and thermal activation in c-axis transport in Bi2Sr2CaCu2O8+δ

• Published in: Physica. C, Superconductivity Vol. 460-462; no. 2; pp. 831 - 832
• Main Authors: GIURA, M, FASTAMPA, R, SARTI, S, POMPEO, N, SILVA, E
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier Science 01-09-2007
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Physics; Proximity effects, weak links, tunneling phenomena, and josephson effects, adreev effect, sn and sns junctions; Superconductivity; Electrical conductivity; Pseudogap; Doping; Tunnel effect; Bismuth oxides; 72.80.-r; Energy barrier; Cuprates; Calcium oxides; Phenomenological model; Strontium oxides; 74.25.Dw; 74.25.Fy; Energy gap; Monocrystals; 74.72.Hs Bi2Sr2CaCu2O8+δ; High-Tc superconductors; Tunneling; c-Axis resistivity; Copper oxides; Activation energy
• ISSN: 0921-4534; 1873-2143
• DOI: 10.1016/j.physc.2007.04.088

We present a phenomenological model for the electrical transport in double-layered cuprates, based on the existence of two energy barriers along the c-axis. The model is applied to measurements of the dc resistivity in Bi2Sr2CaCu2O8+delta single crystals. We find that the model gives a comprehensive description of the out-of-plane normal resistivity rhoc at various doping delta. Once the normal state has been determined, it is possible to obtain the fraction eta(T,delta) of the carriers that, below the pseudogap temperature T*, do not participate to the c-axis conductivity. We find that all the curves eta(T,delta) collapse onto a single universal curve eta[T/T*(delta)].