Engineering antiferroelectric nucleation in ferroelectric films with enhanced piezoelectricity
Tailoring ferroelectric-antiferroelectric phase transitions provides strategic advantages for potential applications in digital displacement transducers and ultrathin ferroelectric capacitors. In particular, epitaxy of artificial superlattice has been widely used and proved to be capable of creating...
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| Published in: | Acta materialia Vol. 250; p. 118885 |
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| Main Authors: | , , , , , , , , , , , , |
| Format: | Journal Article |
| Language: | English |
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15-05-2023
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| Abstract | Tailoring ferroelectric-antiferroelectric phase transitions provides strategic advantages for potential applications in digital displacement transducers and ultrathin ferroelectric capacitors. In particular, epitaxy of artificial superlattice has been widely used and proved to be capable of creating antiferroelectric-type characteristics within intrinsic ferroelectrics. Here, we have achieved dedicatedly control of ferroelectric-antiferroelectric phase transition by introducing 2 unit-cells antiferroelectric PbZrO3 layers into the intrinsic ferroelectric BiFeO3 films, with the ultrathin PbZrO3 layers acting as the structural spacer to bridge the robust nucleation of striping phase in BiFeO3 layers. Aberration-corrected scanning transmission electron microscopy characterization revealed that the BiFeO3 layers experienced a transition to the antiferroelectric-like polymorph via interface-transferred lattice distortion of alternate cation displacement, thereby forming the periodic ferroelectric-antiferroelectric nanoscale laminas. Further piezoresponse force measurements gave the direct evidences that the modulated superlattice exhibited improved piezoelectric performance compared with typical rhombohedral BiFeO3 films. This work paves the way for engineering polarity-mismatched superlattices with enhanced piezoelectric response and enriches the fundamental of structure-functionality correlations in oxide heterosystems.
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| AbstractList | Tailoring ferroelectric-antiferroelectric phase transitions provides strategic advantages for potential applications in digital displacement transducers and ultrathin ferroelectric capacitors. In particular, epitaxy of artificial superlattice has been widely used and proved to be capable of creating antiferroelectric-type characteristics within intrinsic ferroelectrics. Here, we have achieved dedicatedly control of ferroelectric-antiferroelectric phase transition by introducing 2 unit-cells antiferroelectric PbZrO3 layers into the intrinsic ferroelectric BiFeO3 films, with the ultrathin PbZrO3 layers acting as the structural spacer to bridge the robust nucleation of striping phase in BiFeO3 layers. Aberration-corrected scanning transmission electron microscopy characterization revealed that the BiFeO3 layers experienced a transition to the antiferroelectric-like polymorph via interface-transferred lattice distortion of alternate cation displacement, thereby forming the periodic ferroelectric-antiferroelectric nanoscale laminas. Further piezoresponse force measurements gave the direct evidences that the modulated superlattice exhibited improved piezoelectric performance compared with typical rhombohedral BiFeO3 films. This work paves the way for engineering polarity-mismatched superlattices with enhanced piezoelectric response and enriches the fundamental of structure-functionality correlations in oxide heterosystems.
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| ArticleNumber | 118885 |
| Author | Wang, J.H. Cao, Y. Jiang, R.J. Gong, F.H. Liu, N. Lv, X.D. Chen, S.J. Zhu, Y.L. Wang, Y.J. Ma, X.L. Tang, Y.L. Liu, S.Z. Geng, W.R. |
| Author_xml | – sequence: 1 givenname: S.Z. surname: Liu fullname: Liu, S.Z. organization: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China – sequence: 2 givenname: W.R. surname: Geng fullname: Geng, W.R. organization: Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China – sequence: 3 givenname: Y.L. surname: Tang fullname: Tang, Y.L. email: yltang@imr.ac.cn organization: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China – sequence: 4 givenname: Y.L. surname: Zhu fullname: Zhu, Y.L. email: zhuyinlian@sslab.org.cn organization: Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China – sequence: 5 givenname: Y.J. surname: Wang fullname: Wang, Y.J. organization: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China – sequence: 6 givenname: Y. surname: Cao fullname: Cao, Y. organization: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China – sequence: 7 givenname: R.J. surname: Jiang fullname: Jiang, R.J. organization: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China – sequence: 8 givenname: N. surname: Liu fullname: Liu, N. organization: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China – sequence: 9 givenname: F.H. surname: Gong fullname: Gong, F.H. organization: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China – sequence: 10 givenname: J.H. surname: Wang fullname: Wang, J.H. organization: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China – sequence: 11 givenname: X.D. surname: Lv fullname: Lv, X.D. organization: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China – sequence: 12 givenname: S.J. surname: Chen fullname: Chen, S.J. organization: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China – sequence: 13 givenname: X.L. surname: Ma fullname: Ma, X.L. organization: Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China |
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| Keywords | Piezoelectricity Antiferroelectric nucleation Scanning transmission electron microscopy Spacer Phase transition |
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