Sasers: resonant transitions in narrow-gap semiconductors and in exciton system in coupled quantum wells
Two schemes for steady stimulated phonon generation (saser, i.e., phonon laser) are proposed. The first scheme exploits a narrow-gap indirect semiconductor or analogous indirect gap semiconductor heterostructure where the tuning into resonance of one-phonon transition of electron–hole recombination...
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Published in: | Physics letters. A Vol. 282; no. 6; pp. 407 - 414 |
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30-04-2001
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Abstract | Two schemes for steady stimulated phonon generation (saser, i.e.,
phonon laser) are proposed. The first scheme exploits a narrow-gap indirect semiconductor or analogous indirect gap semiconductor heterostructure where the tuning into resonance of one-phonon transition of electron–hole recombination can be carried out by external pressure, magnetic or electric fields. The second scheme uses one-phonon transition between direct and indirect exciton levels in coupled quantum wells. The tuning into the resonance of this transition can be accomplished by engineering of dispersion of indirect exciton by external in-plane magnetic and normal electric fields. In the second scheme the magnitude of phonon wave vector is determined by magnitude of in-plane magnetic field and, therefore, such a saser is tunable. Both schemes are analyzed and estimated numerically. |
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AbstractList | Two schemes for steady stimulated phonon generation (saser, i.e.,
phonon laser) are proposed. The first scheme exploits a narrow-gap indirect semiconductor or analogous indirect gap semiconductor heterostructure where the tuning into resonance of one-phonon transition of electron–hole recombination can be carried out by external pressure, magnetic or electric fields. The second scheme uses one-phonon transition between direct and indirect exciton levels in coupled quantum wells. The tuning into the resonance of this transition can be accomplished by engineering of dispersion of indirect exciton by external in-plane magnetic and normal electric fields. In the second scheme the magnitude of phonon wave vector is determined by magnitude of in-plane magnetic field and, therefore, such a saser is tunable. Both schemes are analyzed and estimated numerically. |
Author | Merkulova, S.P. Lozovik, Yu.E. Ovchinnikov, I.V. |
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Cites_doi | 10.1103/PhysRev.80.72 10.1103/PhysRevLett.68.1196 10.1016/0921-4526(95)00706-7 10.1088/0953-8984/12/13/322 10.1134/1.558404 10.1016/0038-1098(94)00452-8 10.1016/S0375-9601(97)00039-X 10.1063/1.103646 10.1103/PhysRevLett.64.3066 10.1134/1.1335123 10.1134/1.568294 10.1103/PhysRevLett.74.450 10.1134/1.567264 10.1103/PhysRevLett.59.2337 10.1016/S0375-9601(97)00133-3 10.1103/PhysRevB.55.2934 10.1088/0268-1242/13/3/007 10.1209/0295-5075/24/5/015 10.1103/PhysRevA.38.788 10.1103/PhysRevLett.73.304 10.1103/PhysRevE.51.2480 10.1103/PhysRevB.62.1548 |
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phonon laser) are proposed. The first scheme exploits a narrow-gap indirect semiconductor or... |
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Title | Sasers: resonant transitions in narrow-gap semiconductors and in exciton system in coupled quantum wells |
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