Substrate orientation dependence of the growth of GaSe thin films on GaAs

• Published in: Applied surface science Vol. 117; pp. 523 - 529
• Main Authors: Tatsuyama, C., Nishiwaki, H., Asai, K., Lim, K.K., Tambo, T., Ueba, H.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-06-1997
• Subjects: AFM; Ga 2Se 3; GaAs; GaSe; Heteroepitaxy; LEELS; AFM; Heteroepitaxy; Ga 2Se 3; LEELS; GaSe; GaAs
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(97)80136-5

The initial stages of the heteroepitaxial growth of GaSe thin films on GaAs(001), (111)A and (111)B surfaces have been studied by means of LEELS (low-energy electron-loss spectroscopy) and AFM (atomic force microscopy). GaSe films were grown on the substrates at 400°C using a single evaporation source of GaSe. The evolution of a LEELS spectrum with increase in film thickness reveals a difference in deposition depending on the surfaces. While only GaSe grows on GaAs(111)A and (111)B surfaces, the GaAs(001) surface first undergoes a deposition of Ga
2Se
3; subsequently GaSe grows on the thin Ga
2Se
3. In the AFM images of films with thickness of about 20 Å on GaAs(111)A and (111)B surfaces, steps with a height of a primitive layer thickness of GaSe are observed, thereby suggesting a primitive layer-by primitive layer growth of GaSe.