Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400°C for through silicon via application

• Published in: Thin solid films Vol. 550; pp. 259 - 263
• Main Authors: Su, Meiying, Yu, Daquan, Liu, Yijun, Wan, Lixi, Song, Chongshen, Dai, Fengwei, Xue, Kai, Jing, Xiangmeng, Guidotti, Daniel
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-01-2014; Elsevier
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Composition and phase identification; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Conformality; Cross-disciplinary physics: materials science; rheology; Densification; Electrical characteristics; Electron and ion emission by liquids and solids; impact phenomena; Exact sciences and technology; Field emission, ionization, evaporation, and desorption; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Plasma enhanced chemical vapor deposition; Residual stress; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Tetraethylorthosilicate; Thin film structure and morphology; Through silicon via; Conformality; Electrical characteristics; Densification; Through silicon via; Plasma enhanced chemical vapor deposition; Tetraethylorthosilicate; Residual stress; Scanning electron microscopy; Fourier transform spectroscopy; Electrical properties; Field emission; Residual stresses; Leakage currents; CV characteristic; Thin films; Thermal properties; Breakdown voltage; Morphology; Stress effects; Chemical composition; Silicon; PECVD; Thermal stresses; Electrical characteristic
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.11.002

The dielectric via liner of through silicon vias was deposited at 400°C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO2 films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage.
•Tetraethyl orthosilicate-based oxide films were deposited for packaging application.•The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400°C.•The PECVD oxide films exhibit good step coverage.•The 400°C PECVD oxide films exhibit low thermal stress and current leakage.•The 400°C PECVD oxide films show high breakdown voltage and acceptable permittivity.