Low-insertion-loss DP3T MMIC switch for dual-band cellular phones

We propose a new type of dual-pole triple-throw double heterojunction monolithic microwave integrated circuit (IC) switch for use in digital cellular phones. The IC we developed exhibits a low gate leakage current of 400 nA and an insertion loss as low as 0.4 dB, even at added power of 34 dBm at a f...

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Bibliographic Details
Published in:	IEEE journal of solid-state circuits Vol. 34; no. 8; pp. 1051 - 1055
Main Authors:	Nagayama, A., Nishibe, M., Inaoka, T., Mineshima, N.
Format:	Journal Article
Language:	English
Published:	IEEE 01-08-1999
Subjects:	Cell phones Cellular Cellular phones Digital integrated circuits Distortion Dual band Heterojunctions Integrated circuits Leakage current Microwave integrated circuits Microwaves MMICs Monolithic integrated circuits Noise levels Switches Switching circuits
Online Access:	Get full text
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Summary:	We propose a new type of dual-pole triple-throw double heterojunction monolithic microwave integrated circuit (IC) switch for use in digital cellular phones. The IC we developed exhibits a low gate leakage current of 400 nA and an insertion loss as low as 0.4 dB, even at added power of 34 dBm at a frequency of 950 MHz. Measured P/sub 1 dB/ was about 36 dBm, and a low distortion of 65 dBc was also obtained.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1
ISSN:	0018-9200 1558-173X
DOI:	10.1109/4.777102