Bond-centered interstitial hydrogen in silicon: semiempirical electronic-structure calculations

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Bibliographic Details
Published in:	Physical review. B, Condensed matter Vol. 38; no. 11; pp. 7520 - 7529
Main Authors:	DELEO, G. G, DOROGI, M. J, BEALL FOWLER, W
Format:	Journal Article
Language:	English
Published:	Woodbury, NY American Physical Society 15-10-1988 American Institute of Physics
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics Total energy Semiconductor materials MNDO method Hydrogen Theoretical study Impurity site Atomic cluster Impurity level Silicon
Online Access:	Get full text
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Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0163-1829 1095-3795
DOI:	10.1103/physrevb.38.7520