Indium droplet formation during molecular beam epitaxy of InGaN

Indium droplet formation during molecular beam epitaxy of InGaN

Critical indium flux resulting in liquid droplet formation on the surface of InGaN ternary compound is measured as a function of temperature using laser reflectometry. In contrast to other III–V compounds In droplets are found to be formed on the surface of the growing crystal both under metal- and...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth Vol. 206; no. 1; pp. 147 - 149
Main Authors: Chaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu
Format: Journal Article
Language:English
Published: Elsevier B.V 01-10-1999
Subjects:
Droplet formation
InGaN
MBE
Surface segregation
MBE
Surface segregation
InGaN
Droplet formation
81.15.Hi
64.75.+g
81.05.Ea
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Critical indium flux resulting in liquid droplet formation on the surface of InGaN ternary compound is measured as a function of temperature using laser reflectometry. In contrast to other III–V compounds In droplets are found to be formed on the surface of the growing crystal both under metal- and N-rich conditions.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(99)00298-5