Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
The effects of annealing time and Si cap layer thickness on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing S...
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| Published in: | Journal of crystal growth Vol. 227; pp. 766 - 769 |
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| Main Authors: | , , , , , , , , |
| Format: | Journal Article |
| Language: | English |
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Elsevier B.V
01-07-2001
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| Abstract | The effects of annealing time and Si cap layer thickness on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. |
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| AbstractList | The effects of annealing time and Si cap layer thickness on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. |
| Author | Zeng, Y.P Huang, D.D Lin, Y.X Li, J.P Li, J.M Lin, L.Y Sun, D.Z Kong, M.Y Gao, F |
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| Cites_doi | 10.1063/1.122018 10.1063/1.107923 10.1016/S0038-1101(99)00284-1 10.1063/1.1659510 10.1016/S0022-0248(98)00534-X 10.1103/PhysRevB.54.8761 10.1063/1.102165 10.1063/1.99632 10.1109/16.678548 10.1063/1.120912 10.1063/1.104454 10.1063/1.349451 |
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| Keywords | A3. Molecular beam epitaxy B1. Germanium silicon alloys 81.40.Ef 81.40.Lm 81.15.Hi B2. Semiconducting materials A1. Annealing |
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| SubjectTerms | A1. Annealing A3. Molecular beam epitaxy B1. Germanium silicon alloys B2. Semiconducting materials |
| Title | Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability |
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