Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

• Published in: Journal of crystal growth Vol. 227; pp. 766 - 769
• Main Authors: Gao, F, Lin, Y.X, Huang, D.D, Li, J.P, Sun, D.Z, Kong, M.Y, Zeng, Y.P, Li, J.M, Lin, L.Y
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-07-2001
• Subjects: A1. Annealing; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting materials; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; 81.40.Ef; 81.40.Lm; 81.15.Hi; B2. Semiconducting materials; A1. Annealing
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)00823-5

The effects of annealing time and Si cap layer thickness on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness.