Dislocation formation and gettering mechanism of impurity atoms close to the active region

High-energy beams are starting to play an important role in silicon device technology. The most important potential use is the formation of CMOS profiled tubs by high-energy ion implantation which can give substantial economic advantages as well as enhanced device performance over the conventional f...

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Bibliographic Details

Published in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 127; pp. 252 - 255
Main Author:	Gadiyak, G.V.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-05-1997
Online Access:	Get full text
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