Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE

Mid-infrared light-emitting diodes (LEDs) operating in the 3.3–4.5 μm wavelength range at room temperature are produced on the basis of InAsSbP/InAsSb heterostructures. The photoluminescence of InAsSb layers and electroluminescence properties of LEDs are investigated. LEDs light-current characterist...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 248; pp. 296 - 300
Main Authors:	Kizhayev, S.S, Zotova, N.V, Molchanov, S.S, Pushnyi, B.V, Yakovlev, Yu.P
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-02-2003
Subjects:	A3. Metalorganic vapor phase epitaxy B1. InAsSb B1. InAsSbP B3. Infrared LEDs B1. InAsSbP B1. InAsSb A3. Metalorganic vapor phase epitaxy 81.15.Gh B3. Infrared LEDs
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Summary:	Mid-infrared light-emitting diodes (LEDs) operating in the 3.3–4.5 μm wavelength range at room temperature are produced on the basis of InAsSbP/InAsSb heterostructures. The photoluminescence of InAsSb layers and electroluminescence properties of LEDs are investigated. LEDs light-current characteristics are also studied. Fabricated were LEDs of “A” and “B” type, “A” being preferential for currents in excess of 200 mA, and “B” being better for the current range 0–200 mA. When operating at 5% duty cycle, at room temperature wavelength λ=3.4 μm the pulse power of the diodes is measured as 1.2 mW under 1.3 A drive current.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(02)01830-4