High-power ps InGaAs diode laser MOPA system for efficient frequency doubling in periodically poled KTP

• Published in: Applied physics. B, Lasers and optics Vol. 87; no. 3; pp. 425 - 430
• Main Authors: FUCHS, H, TREMONT, M. A, CASEL, O, WOLL, D, ULM, T, LHUILLIER, J. A, WALLENSTEIN, R
• Format: Journal Article
• Language: English
• Published: Berlin Springer 01-05-2007
• Subjects: Conversion; Exact sciences and technology; Frequency conversion ; harmonic generation, including high-order harmonic generation; Frequency doubling; Fundamental areas of phenomenology (including applications); Indium gallium arsenides; Injection current; Lasers; Nonlinear optics; Optical sources and standards; Optics; Oscillators; Physics; Repetition; Semiconductor lasers; laser diodes; Spectra; Visible and ultraviolet sources; Phosphates; Second harmonic generation; Titanyl compounds; Pulse width; Gallium arsenides; Potassium compounds; Ternary compounds; Poled material; Laser diodes; Pulsed lasers; Indium arsenides; Injection current; Semiconductor lasers; Infrared laser; Optical frequency conversion; Quaternary compounds; Nonlinear optics; ps range
• ISSN: 0946-2171; 1432-0649
• DOI: 10.1007/s00340-007-2586-x

This paper reports on a mode-locked InGaAs master oscillator power amplifier (MOPA) system that generates at 920 nm 14-ps-long pulses with a repetition rate of 4.3 GHz and an average power of 2.7 W. Single-pass frequency doubling in a periodically poled KTP crystal provides 550 mW of blue 460-nm radiation. The power of the blue output, which corresponds to a conversion efficiency of more than 20%, was optimized by a detailed investigation of the influence of various system parameters like injection current and repetition rate on pulse power, pulse duration, and spectral shape of the infrared laser pulses.