Induced magnetoresistance in semiconductor devices due to single sub-micron magnetic barriers

We investigate the magnetoresistance induced in a near-surface two-dimensional electron gas by the fringe field of a thin ferromagnetic line on the surface of the device. From the measured magnetoresistance, we deduce the hysteretic properties of the magnetic line, using the semiconductor device as...

Full description

Bibliographic Details

Published in:	Physica. B, Condensed matter Vol. 256-258; pp. 380 - 383
Main Authors:	Kubrak, V., Rahman, F., Overend, N., Gallagher, B.L., Main, P.C., Boeck, J.de, Behest, M., Marrows, C.H., Howson, M.A.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 02-12-1998
Subjects:	Hybrid ferromagnetic/semiconductor devices Magnetoresistance Nanomagnetometry Magnetoresistance Nanomagnetometry Hybrid ferromagnetic/semiconductor devices
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!