Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package)

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 53; no. 3; pp. 385 - 387
• Main Authors: Ivanov, P. A., Potapov, A. S., Samsonova, T. P.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-03-2019; Springer; Springer Nature B.V
• Subjects: CAD; CAD software; Capacitors; Computer aided design; Computer simulation; Doping; Dynamic characteristics; Impurities; Ionization; Magnetic Materials; Magnetism; Modules; Physics; Physics and Astronomy; Physics of Semiconductor Devices; Semiconductor devices; Semiconductors (Materials); Silicon carbides; Silicon compounds; Software; Technology
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782619030072

Transient process in a resistor–capacitor (RC) circuit with a reverse-biased 4
H
-SiC
p
–
n
diode as the capacitive element is simulated. Simulation is performed with the ATLAS software module from the SILVACO TCAD system for technology computer-aided design (TCAD). An alternative way, to that in ATLAS, to set the parameters of doping impurities partly ionized in 4
H
-SiC at room temperature is suggested. (The INCOMPLETE physical model available in the ATLAS module, which describes the incomplete ionization of doping impurities in semiconductors, is unsuitable for simulating the dynamic characteristics of devices.) The simulation results are discussed in relation to previously obtained experimental results.