Correlation of structural and electronic properties in a new low-dimensional form of mercury telluride
Using high resolution electron microscopy and first principles quantum mechanical calculations we have explored the fundamental physics and chemistry of the semiconductor, HgTe grown inside single wall carbon nanotubes. This material forms a low-dimensional structure based on a repeating Hg2Te2 moti...
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| Published in: | Physical review letters Vol. 96; no. 21; p. 215501 |
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| Main Authors: | , , , , , , , , , |
| Format: | Journal Article |
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02-06-2006
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| Abstract | Using high resolution electron microscopy and first principles quantum mechanical calculations we have explored the fundamental physics and chemistry of the semiconductor, HgTe grown inside single wall carbon nanotubes. This material forms a low-dimensional structure based on a repeating Hg2Te2 motif in which both atom species adopt new coordination geometries not seen in the bulk. Density-functional theory calculations confirm the stability of this structure and demonstrate conclusively that it arises solely as a consequence of constrained low dimensionality. This change is directly correlated with a modified electronic structure in which the low-dimensional form of HgTe is transformed from a bulk semimetal to a semiconductor. |
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| AbstractList | Using high resolution electron microscopy and first principles quantum mechanical calculations we have explored the fundamental physics and chemistry of the semiconductor, HgTe grown inside single wall carbon nanotubes. This material forms a low-dimensional structure based on a repeating Hg2Te2 motif in which both atom species adopt new coordination geometries not seen in the bulk. Density-functional theory calculations confirm the stability of this structure and demonstrate conclusively that it arises solely as a consequence of constrained low dimensionality. This change is directly correlated with a modified electronic structure in which the low-dimensional form of HgTe is transformed from a bulk semimetal to a semiconductor. |
| ArticleNumber | 215501 |
| Author | Lindan, Phillip J D Hutchison, John L Harding, John Lin, Grace Sloan, Jeremy Carter, Robin Kirkland, Angus I Meyer, Rüdiger R Green, Malcolm L H Vlandas, Alexis |
| Author_xml | – sequence: 1 givenname: Robin surname: Carter fullname: Carter, Robin organization: Inorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford OX1 3QR, United Kingdom – sequence: 2 givenname: Jeremy surname: Sloan fullname: Sloan, Jeremy – sequence: 3 givenname: Angus I surname: Kirkland fullname: Kirkland, Angus I – sequence: 4 givenname: Rüdiger R surname: Meyer fullname: Meyer, Rüdiger R – sequence: 5 givenname: Phillip J D surname: Lindan fullname: Lindan, Phillip J D – sequence: 6 givenname: Grace surname: Lin fullname: Lin, Grace – sequence: 7 givenname: Malcolm L H surname: Green fullname: Green, Malcolm L H – sequence: 8 givenname: Alexis surname: Vlandas fullname: Vlandas, Alexis – sequence: 9 givenname: John L surname: Hutchison fullname: Hutchison, John L – sequence: 10 givenname: John surname: Harding fullname: Harding, John |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/16803245$$D View this record in MEDLINE/PubMed |
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| References | PhysRevLett.96.215501Cc20R1 PhysRevLett.96.215501Cc30R1 PhysRevLett.96.215501Cc12R1 PhysRevLett.96.215501Cc23R1 J. Sloan (PhysRevLett.96.215501Cc4R1) 2004; 29 PhysRevLett.96.215501Cc22R1 PhysRevLett.96.215501Cc14R1 PhysRevLett.96.215501Cc13R1 PhysRevLett.96.215501Cc24R1 Y. Endo (PhysRevLett.96.215501Cc11R1) 2000; 253 PhysRevLett.96.215501Cc1R1 PhysRevLett.96.215501Cc3R1 K. Porfyrakis (PhysRevLett.96.215501Cc10R1) 2003; 15 PhysRevLett.96.215501Cc6R1 PhysRevLett.96.215501Cc27R1 PhysRevLett.96.215501Cc26R1 PhysRevLett.96.215501Cc8R1 PhysRevLett.96.215501Cc18R1 PhysRevLett.96.215501Cc9R1 PhysRevLett.96.215501Cc17R1 PhysRevLett.96.215501Cc19R1 |
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