The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI

• Published in: IEEE transactions on nuclear science Vol. 54; no. 6; pp. 2245 - 2250
• Main Authors: Bellini, M., Bongim Jun, Sutton, A.K., Appaswamy, A.C., Peng Cheng, Cressler, J.D., Marshall, P.W., Schrimpf, R.D., Fleetwood, D.M., El-Kareh, B., Balster, S., Steinmann, P., Yasuda, H.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-12-2007; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: C-SiGe; Calibration; Cryogenics; Devices; Direct current; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit noise; Inverse; Irradiation; Isolation technology; Protons; radiation effects; SiGe HBT; Silicon germanides; Silicon germanium; Silicon on insulator technology; silicon-on-insulator; Simulation; SOI; Space technology; TCAD; Temperature; X-rays
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2007.909022

The impact of 63.3 MeV proton and 10 keV X-ray irradiation on the DC and AC performance of complementary SiGe HBTs on thick-film SOI is investigated. Proton and X-ray induced changes in the forward and inverse Gummel characteristics, the output characteristics, and avalanche multiplication are reported for both npn and pnp SiGe HBTs, at both room temperature (300 K) and at cryogenic temperatures (down to 30 K). Comparison of room temperature and cryogenic data suggests interface trap formation at two distinct physical locations in the transistors. Experimental data and calibrated TCAD simulations are used to compare the radiation response of both thick-film SOI devices and thin-film SOI SiGe HBTs.