Effects of X-ray irradiation on GIDL in MOSFETs

• Published in: IEEE electron device letters Vol. 13; no. 4; pp. 189 - 191
• Main Authors: Acovic, A., Hsu, C.C.-H., Hsia, L.-C., Balasinski, A., Ma, T.-P.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-04-1992; Institute of Electrical and Electronics Engineers
• Subjects: Annealing; Applied sciences; Associate members; Circuits; CMOS technology; Electronics; Exact sciences and technology; Fabrication; Leakage current; MOSFETs; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Tunneling; Voltage; X-ray lithography; Field effect transistor; p channel; Voltage current curve; Tunnel effect; Irradiation; n channel; Leakage current; X ray; MOS transistor; Experimental study
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.145016

The effect of X-ray irradiation on the gate-induced drain leakage (GIDL) is shown to be mostly due to the electrostatic effect of the trapped positive charge in n-channel MOSFETs. In p-channel MOSFETs, in addition, irradiation increases the interface-state-assisted tunneling component of the GIDL. In both n- and p-channel MOSFETs, a forming gas anneal at 400 degrees C completely removes all effects of irradiation on the GIDL.< >