MoS2 doping by atomic layer deposition of high-k dielectrics using alcohol as process oxidants

• Published in: Applied surface science Vol. 541; p. 148504
• Main Authors: Woo, Whang Je, Seo, Seunggi, Nam, Taewook, Kim, Youngjun, Kim, Donghyun, Song, Jeong-Gyu, Oh, Il-Kwon, Lim, Jun Hyung, Kim, Hyung-Jun, Kim, Hyungjun
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-03-2021
• Subjects: Alcohol; Atomic-layer-deposition; Doping; Field-effect-transistor; MoS2; Atomic-layer-deposition; Alcohol; Field-effect-transistor; MoS2; Doping
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2020.148504

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•Atomic layer deposition of Al2O3 using alcohols induced doping of MoS2.•Use of iso-propyl alcohol as process oxidant induced strong n-type doping while ethanol did not.•Degree of doping could be controlled by ALD process parameters.
We developed doping technique of transition metal dichalcogenides based on atomic layer deposition (ALD) of oxide thin films. In this study, we deposited ALD Al2O3 overlayer using various oxidant including iso-propyl alcohol (IPA) and ethanol and investigated the doping effects depending on the choice of oxidant for ALD process. The doping effects were investigated by the change in the performance of bottom-gated MoS2 field effect transistors. Experimental results indicate that Al2O3 overlayer deposited using IPA as ALD reactant produces more efficient n-type doping effect compared to ethanol. Moreover, doping was effectively controlled by modulating atomic layer deposition process. ALD process using effective oxidant material is expected to be practically used for realizing the fabrication of threshold voltage-controllable transistors or further applications such as diodes.