Laser hydriding of crystalline and amorphous silicon

Crystalline and ion-beam-amorphized silicon samples were irradiated with a pulsed nanosecond excimer laser in a pure hydrogen atmosphere. The hydrogen concentration was determined via the H(N,{/content/RLF0UHTGYHFWXK9H/xxlarge945.gif}{/content/RLF0UHTGYH F WXK9H/xxlarge947.gif})C nuclear reaction. I...

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Bibliographic Details
Published in:	Applied physics. A, Materials science & processing Vol. 77; no. 6; pp. 793 - 797
Main Authors:	CHWICKERT, M, CARPENE, E, UHRMACHER, M, SCHAAF, P, LIEB, K. P
Format:	Journal Article
Language:	English
Published:	Berlin Springer 01-11-2003
Subjects:	Condensed matter: structure, mechanical and thermal properties Crystal structure Exact sciences and technology Excimer lasers Hydrogen storage Lasers Materials science Nanostructure Physical radiation effects, radiation damage Physics Radiation effects on specific materials Recrystallization Semiconductors Silicon Structure of solids and liquids; crystallography Ultraviolet, visible, and infrared radiation effects (including laser radiation) Radiation effects Amorphous material RBS Channeling Semiconductor materials Controlled atmospheres Surface treatments Experimental study Thermodynamic equilibrium Ion beams Hydridation Laser radiation Silicon Damage Solubility limit Depth profiles
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