Laser hydriding of crystalline and amorphous silicon

• Published in: Applied physics. A, Materials science & processing Vol. 77; no. 6; pp. 793 - 797
• Main Authors: CHWICKERT, M, CARPENE, E, UHRMACHER, M, SCHAAF, P, LIEB, K. P
• Format: Journal Article
• Language: English
• Published: Berlin Springer 01-11-2003
• Subjects: Condensed matter: structure, mechanical and thermal properties; Crystal structure; Exact sciences and technology; Excimer lasers; Hydrogen storage; Lasers; Materials science; Nanostructure; Physical radiation effects, radiation damage; Physics; Radiation effects on specific materials; Recrystallization; Semiconductors; Silicon; Structure of solids and liquids; crystallography; Ultraviolet, visible, and infrared radiation effects (including laser radiation); Radiation effects; Amorphous material; RBS; Channeling; Semiconductor materials; Controlled atmospheres; Surface treatments; Experimental study; Thermodynamic equilibrium; Ion beams; Hydridation; Laser radiation; Silicon; Damage; Solubility limit; Depth profiles
• DOI: 10.1007/s00339-003-2201-x
• EISSN: 1432-0630
• ISSN: 0947-8396

Crystalline and ion-beam-amorphized silicon samples were irradiated with a pulsed nanosecond excimer laser in a pure hydrogen atmosphere. The hydrogen concentration was determined via the H(N,{/content/RLF0UHTGYHFWXK9H/xxlarge945.gif}{/content/RLF0UHTGYH F WXK9H/xxlarge947.gif})C nuclear reaction. In the case of crystalline silicon, hydrogen incorporation into the sample surface was found to be well above the hydrogen solubility limit at thermodynamic equilibrium. The hydrogen depth profiles perfectly matched the damage profiles measured via Rutherford backscattering channeling spectroscopy. For the pre-amorphized silicon samples, the laser treatment resulted in epitaxial recrystallization of the amorphous top layer, but the hydrogen uptake was found to be negligible in that case. The experimental data were compared with the results of thermodynamic simulations of the laser--gas--material interaction.