Microwave performance of GaAs-on-Si MESFETs with Si buffer layers

• Published in: IEEE transactions on electron devices Vol. 40; no. 3; pp. 507 - 512
• Main Authors: Georgakilas, A., Halkias, G., Christou, A., Papavassiliou, C., Perantinos, G., Konstantinidis, G., Panayotatos, P.N.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-03-1993; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Buffer layers; Electronics; Exact sciences and technology; Gallium arsenide; Materials reliability; MESFETs; Molecular beam epitaxial growth; Monolithic integrated circuits; Parasitic capacitance; Photodiodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Thermal conductivity; Transistors; Buffer layer; Gallium Arsenides; Transistor parameter; Frequency characteristic; Equivalent circuit; Smith chart; Silicon; Microwave transistor; Performance analysis; Metal semiconductor field effect transistor; Gain; Electrical characteristic
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.199355

The incorporation of silicon-buffer layers is shown to be critical in attaining optimized microwave performance for GaAs on silicon MESFETs. A current gain cutoff frequency (f/sub t/) of 18 GHz and maximum power cutoff frequency (f/sub max/) of 30 GHz is reported for relaxed geometry devices. The low parasitic capacitance and excellent device isolation make this structure suitable for monolithic integration.< >